SI5513CDC-T1-GE3 Detailed Description
Part Number |
SI5513CDC-T1-GE3 |
Part Status |
Active |
FET Type |
N and P-Channel |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
20V |
Current - Continuous Drain (Id) @ 25°C |
4A, 3.7A |
Rds On (Max) @ Id, Vgs |
55 mOhm @ 4.4A, 4.5V |
Vgs(th) (Max) @ Id |
1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
4.2nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds |
285pF @ 10V |
Power - Max |
3.1W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SMD, Flat Lead |
Supplier Device Package |
1206-8 ChipFET™ |
Weight |
- |
Country of Origin |
- |
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