| Part Number | SI5404BDC-T1-E3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±12V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Rds On (Max) @ Id, Vgs | 28 mOhm @ 5.4A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 1206-8 ChipFET™ |
| Package / Case | 8-SMD, Flat Lead |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SI5401DC | VISHAY | P-Channel 20-V (D-S) MOSFET | Details |
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SI5401DC-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 5.2A 1206-8 | Details |
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SI5401DC-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 5.2A 1206-8 | Details |
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SI5402BDC | VISHAY | N-Channel 30-V (D-S) MOSFET | Details |
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SI5402BDC-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 4.9A 1206-8 | Details |
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SI5402BDC-T1-GE3 | Vishay Siliconix | MOSFET N-CH 30V 4.9A 1206-8 | Details |
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SI5402BDC_08 | VISHAY | N-Channel 30-V (D-S) MOSFET | Details |
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SI5402DC | VISHAY | N-Channel 30-V (D-S) MOSFET | Details |
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SI5402DC-T1 | VISHAY | SI5402DC-T1 VISHAY 1206-8 New Original Stocks | Details |
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SI5402DC-T1-E3 | Vishay Siliconix | MOSFET N-CH 30V 4.9A 1206-8 | Details |
