| Part Number | SI4490DY-T1-E3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 2.85A (Ta) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta) |
| Rds On (Max) @ Id, Vgs | 80 mOhm @ 4A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-SO |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SI4490DY-T1-GE3 | Vishay Siliconix | MOSFET N-CH 200V 2.85A 8-SOIC | Details |
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SI4493DY | VISHAY | SI4493DY VISHAY SOP-8 New Original Stocks | Details |
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SI4493DY-T1-E3 | Vishay Siliconix | MOSFET P-CH 20V 10A 8SOIC | Details |
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SI4493DY-T1-GE3 | Vishay Siliconix | MOSFET P-CH 20V 10A 8SOIC | Details |
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SI4496DY | VISHAY | SI4496DY VISHAY SOP-8 New Original Stocks | Details |
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SI4496DY-RC | VISHAY | R - C Thermal Model Parameters | Details |
