SI4477DY-T1-GE3

SI4477DY-T1-GE3 - Vishay Siliconix

Part Number
SI4477DY-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET P-CH 20V 26.6A 8-SOIC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI4477DY-T1-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
6250 pcs
Reference Price
USD 0.6468/pcs
Our Price
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SI4477DY-T1-GE3 Detailed Description

Part Number SI4477DY-T1-GE3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 26.6A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 190nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 3W (Ta), 6.6W (Tc)
Rds On (Max) @ Id, Vgs 6.2 mOhm @ 18A, 4.5V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
Weight -
Country of Origin -

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