SI4403CDY-T1-GE3 - Vishay Siliconix

Part Number	SI4403CDY-T1-GE3
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	13.4A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	2380pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs	15.5 mOhm @ 9A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI4403BDY	VISHAY	SI4403BDY VISHAY SOP-8 New Original Stocks	Details
SI4403BDY-T1	VISHAY	SI4403BDY-T1 VISHAY SOP-8 New Original Stocks	Details
SI4403BDY-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 7.3A 8-SOIC	Details
SI4403BDY-T1-E3.	V	SI4403BDY-T1-E3. V SO-8 New Original Stocks	Details
SI4403BDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 7.3A 8SOIC	Details
SI4403CDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 13.4A 8SOIC	Details
SI4403DDY-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 15.4A 8SOIC	Details
SI4403DY	SILICONIX	SI4403DY SILICONIX SOP-8 New Original Stocks	Details
SI4403DY-T1-E3	VIS	SI4403DY-T1-E3 VIS SOP-8 New Original Stocks	Details
SI4403DY-T1-E3.	V	SI4403DY-T1-E3. V SO-8 New Original Stocks	Details