SI3900DV-T1-E3

SI3900DV-T1-E3 - Vishay Siliconix

Part Number
SI3900DV-T1-E3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET 2N-CH 20V 2A 6-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SI3900DV-T1-E3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
15000 pcs
Reference Price
USD 0.2455/pcs
Our Price
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SI3900DV-T1-E3 Detailed Description

Part Number SI3900DV-T1-E3
Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2A
Rds On (Max) @ Id, Vgs 125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 830mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package 6-TSOP
Weight -
Country of Origin -

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