| Part Number | SI3586DV-T1-E3 |
|---|---|
| Part Status | Obsolete |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A, 2.1A |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 3.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 830mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Supplier Device Package | 6-TSOP |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SI3585CDV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 3.9A 6TSOP | Details |
 |
SI3585DV | VIS | SI3585DV VIS SOT-26 New Original Stocks | Details |
|
SI3585DV-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 20V 2A 6-TSOP | Details |
|
SI3585DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 2A 6-TSOP | Details |
|
SI3586DV | VIS | SI3586DV VIS SOT-26 New Original Stocks | Details |
|
SI3586DV-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 20V 2.9A 6TSOP | Details |
|
SI3586DV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 2.9A 6-TSOP | Details |
|
SI3586DV_08 | VISHAY | N- and P-Channel 20-V (D-S) MOSFET | Details |
|
SI3588DV | VIS | SI3588DV VIS SOT-26 New Original Stocks | Details |
|
SI3588DV-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 20V 2.5A 6TSOP | Details |
