| Part Number | SI1051X-T1-GE3 |
|---|---|
| Part Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 9.45nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 4V |
| Vgs (Max) | ±5V |
| FET Feature | - |
| Power Dissipation (Max) | 236mW (Ta) |
| Rds On (Max) @ Id, Vgs | 122 mOhm @ 1.2A, 4.5V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SC-89-6 |
| Package / Case | SOT-563, SOT-666 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
SI1050X | VISHAY | N-Channel 8-V (D-S) MOSFET | Details |
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SI1050X-T1-E3 | Vishay Siliconix | MOSFET N-CH 8V 1.34A SOT563F | Details |
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SI1050X-T1-GE3 | Vishay Siliconix | MOSFET N-CH 8V 1.34A SC-89-6 | Details |
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SI1050X_08 | VISHAY | N-Channel 8-V (D-S) MOSFET | Details |
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SI1051X | VISHAY | P-Channel 8-V (D-S) MOSFET | Details |
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SI1051X-T1-E3 | Vishay Siliconix | MOSFET P-CH 8V 1.2A SC89-6 | Details |
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SI1051X-T1-GE3 | Vishay Siliconix | MOSFET P-CH 8V 1.2A SC89-6 | Details |
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SI1054X | VISHAY | N-Channel 12-V (D-S) MOSFET | Details |
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SI1054X-T1-E3 | Vishay Siliconix | MOSFET N-CH 12V 1.32A SC89-6 | Details |
|
SI1054X-T1-GE3 | Vishay Siliconix | MOSFET N-CH 12V 1.32A SC89-6 | Details |
