EGL34BHE3_A/H - Vishay Semiconductor Diodes Division

Part Number	EGL34BHE3_A/H
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	100V
Current - Average Rectified (Io)	500mA
Voltage - Forward (Vf) (Max) @ If	1.25V @ 500mA
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	50ns
Current - Reverse Leakage @ Vr	5µA @ 100V
Capacitance @ Vr, F	7pF @ 4V, 1MHz
Mounting Type	Surface Mount
Package / Case	DO-213AA (Glass)
Supplier Device Package	DO-213AA (GL34)
Operating Temperature - Junction	-65°C ~ 175°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
EGL34A	GS	EGL34A GS LL34 New Original Stocks	Details
EGL34A-E3/83	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 500MA DO213AA	Details
EGL34A-E3/98	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 500MA DO213AA	Details
EGL34AHE3/83	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 500MA DO213AA	Details
EGL34AHE3/98	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 500MA DO213AA	Details
EGL34AHE3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 500MA DO213AA	Details
EGL34AHE3_A/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 500MA DO213AA	Details
EGL34A_07	SEMIKRON	Surface mount diode Ultrafast silicon rectifier diodes	Details
EGL34B	VISHAY	Surface Mount Glass Passivated Ultrafast Rectifier	Details
EGL34B-E3/83	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 500MA DO213	Details