DG2032EDN-T1-GE4 Detailed Description
| Part Number |
DG2032EDN-T1-GE4 |
| Part Status |
Active |
| Switch Circuit |
SPDT |
| Multiplexer/Demultiplexer Circuit |
2:1 |
| Number of Circuits |
2 |
| On-State Resistance (Max) |
3.1 Ohm |
| Channel-to-Channel Matching (ΔRon) |
10 mOhm |
| Voltage - Supply, Single (V+) |
1.8 V ~ 5.5 V |
| Voltage - Supply, Dual (V±) |
- |
| Switch Time (Ton, Toff) (Max) |
40ns, 33ns |
| -3db Bandwidth |
221MHz |
| Charge Injection |
-19.4pC |
| Channel Capacitance (CS(off), CD(off)) |
- |
| Current - Leakage (IS(off)) (Max) |
- |
| Crosstalk |
-62dB @ 1MHz |
| Operating Temperature |
-40°C ~ 85°C (TA) |
| Package / Case |
- |
| Supplier Device Package |
- |
| Weight |
- |
| Country of Origin |
- |
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