| Part Number | BYV29-300-E3/45 |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 300V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.25V @ 8A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50ns |
| Current - Reverse Leakage @ Vr | 10µA @ 300V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | -40°C ~ 150°C |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
BYV29-300-E3/45 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 300V 8A TO220AC | Details |
|
BYV29-300HE3/45 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 300V 8A TO220AC | Details |
 |
BYV29-300M | SEME-LAB | HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS | Details |
|
BYV29-400 | NXP | BYV29-400 NXP TO-220.. New Original Stocks | Details |
 |
BYV29-400,127 | WeEn Semiconductors | DIODE GEN PURP 400V 9A TO220AC | Details |
|
BYV29-400-E3/45 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 8A TO220AC | Details |
|
BYV29-400HE3/45 | Vishay Semiconductor Diodes Division | DIODE GEN PURP 400V 8A TO220AC | Details |
|
BYV29-400M | SEME-LAB | HERMETICALLY SEALED FAST RECOVERY SILICON RECTIFIER FOR HI.REL APPLICATIONS | Details |
|
BYV29-500 | PHI | BYV29-500 PHI TO-220.. New Original Stocks | Details |
|
BYV29-500,127 | WeEn Semiconductors | DIODE GEN PURP 500V 9A TO220AC | Details |
