AS3BD-M3/H - Vishay Semiconductor Diodes Division

Part Number	AS3BD-M3/H
Part Status	Active
Diode Type	Avalanche
Voltage - DC Reverse (Vr) (Max)	200V
Current - Average Rectified (Io)	3A (DC)
Voltage - Forward (Vf) (Max) @ If	1.05V @ 3A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	20µA @ 600V
Capacitance @ Vr, F	40pF @ 4V, 1MHz
Mounting Type	Surface Mount
Package / Case	DO-214AA, SMB
Supplier Device Package	DO-214AA (SMB)
Operating Temperature - Junction	-55°C ~ 175°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
AS3BD-M3/H	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 3A DO214AA	Details
AS3BD-M3/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 3A DO214AA	Details
AS3BDHM3_A/H	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 3A DO214AA	Details
AS3BDHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 200V 3A DO214AA	Details
AS3BG-M3/H	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 3A DO214AA	Details
AS3BG-M3/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 3A DO214AA	Details
AS3BGHM3_A/H	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 3A DO214AA	Details
AS3BGHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 3A DO214AA	Details
AS3BJ-M3/52T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO214AA	Details
AS3BJ-M3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 3A DO214AA	Details