TP65H050WS Detailed Description
| Part Number |
TP65H050WS |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) |
650V |
| Current - Continuous Drain (Id) @ 25°C |
34A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
12V |
| Rds On (Max) @ Id, Vgs |
60 mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id |
4.8V @ 700µA |
| Gate Charge (Qg) (Max) @ Vgs |
24nC @ 10V |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
1000pF @ 400V |
| FET Feature |
- |
| Power Dissipation (Max) |
119W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-247-3 |
| Package / Case |
TO-247-3 |
| Weight |
- |
| Country of Origin |
- |
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