TPHR9003NL,L1Q - Toshiba Semiconductor and Storage

Part Number	TPHR9003NL,L1Q
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	74nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	6900pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs	0.9 mOhm @ 30A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	TPHR9003NL,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 60A 8-SOP	Details
	TPHR9203PL,L1Q	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR	Details