TPH8R80ANH,L1Q - Toshiba Semiconductor and Storage

Part Number	TPH8R80ANH,L1Q
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	32A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2800pF @ 50V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1.6W (Ta), 61W (Tc)
Rds On (Max) @ Id, Vgs	8.8 mOhm @ 16A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TPH8R008NH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 80V 34A SOP	Details
TPH8R80ANH,L1Q	Toshiba Semiconductor and Storage	MOSFET N CH 100V 32A 8-SOP	Details
TPH8R903NL,LQ	Toshiba Semiconductor and Storage	MOSFET N CH 30V 20A 8SOP	Details