TPCC8006-H(TE12LQM

TPCC8006-H(TE12LQM - Toshiba Semiconductor and Storage

Part Number
TPCC8006-H(TE12LQM
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 30V 22A 8TSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPCC8006-H(TE12LQM PDF online browsing
Datasheet PDF Download
TPCC8006-H(TE12LQM.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3918 pcs
Reference Price
USD 0/pcs
Our Price
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TPCC8006-H(TE12LQM Detailed Description

Part Number TPCC8006-H(TE12LQM
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 22A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.3V @ 200µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2200pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs 8 mOhm @ 11A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON
Package / Case 8-VDFN Exposed Pad
Weight -
Country of Origin -

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