TK6Q60W,S1VQ - Toshiba Semiconductor and Storage

Part Number	TK6Q60W,S1VQ
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	6.2A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.7V @ 310µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	390pF @ 300V
Vgs (Max)	±30V
FET Feature	Super Junction
Power Dissipation (Max)	60W (Tc)
Rds On (Max) @ Id, Vgs	820 mOhm @ 3.1A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I-Pak
Package / Case	TO-251-3 Stub Leads, IPak
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	TK6Q60W,S1VQ	Toshiba Semiconductor and Storage	MOSFET N CH 600V 6.2A IPAK	Details
	TK6Q65W,S1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 650V 5.8A IPAK-OS	Details