TK1K9A60F,S4X - Toshiba Semiconductor and Storage

Part Number	TK1K9A60F,S4X
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.9 Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id	4V @ 400µA
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 300V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	150°C
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Weight	-
Country of Origin	-