| Part Number | RN1963(TE85L,F) |
|---|---|
| Part Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 22k |
| Resistor - Emitter Base (R2) (Ohms) | 22k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 250MHz |
| Power - Max | 200mW |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
RN1961(TE85L,F) | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 | Details |
 |
RN1961FE(TE85L,F) | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 | Details |
 |
RN1962FE | TOSHIBA | RN1962FE TOSHIBA SOT23-.. New Original Stocks | Details |
|
RN1962FE(TE85L,F) | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 | Details |
|
RN1962TE85LF | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.5W US6 | Details |
|
RN1963(TE85L,F) | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 | Details |
|
RN1963FE(TE85L,F) | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 | Details |
|
RN1964 | TOSHIBA | RN1964 TOSHIBA SOT-36.. New Original Stocks | Details |
|
RN1964FE(TE85L,F) | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.1W ES6 | Details |
|
RN1964TE85LF | Toshiba Semiconductor and Storage | TRANS 2NPN PREBIAS 0.2W US6 | Details |
