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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays, Pre-Biased › RN1904FE,LF(CT
RN1904FE,LF(CT

RN1904FE,LF(CT - Toshiba Semiconductor and Storage

Part Number
RN1904FE,LF(CT
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS 2NPN PREBIAS 0.1W ES6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
RN1904FE,LF(CT PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
10000 pcs
Reference Price
USD 0.0651/pcs
Our Price
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RN1904FE,LF(CT Detailed Description

Part Number RN1904FE,LF(CT
Part Status Active
Transistor Type 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition 250MHz
Power - Max 100mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package ES6
Weight -
Country of Origin -

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