RN1706JE(TE85L,F) - Toshiba Semiconductor and Storage

Part Number	RN1706JE(TE85L,F)
Part Status	Discontinued at Digi-Key
Transistor Type	2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	4.7k
Resistor - Emitter Base (R2) (Ohms)	47k
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SOT-553
Supplier Device Package	ESV
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	RN1706	TOSHIBA	RN1706 TOSHIBA SOT-35.. New Original Stocks	Details
	RN1706JE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.1W ESV	Details