RN1303(TE85L,F) - Toshiba Semiconductor and Storage

Part Number	RN1303(TE85L,F)
Part Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	22k
Resistor - Emitter Base (R2) (Ohms)	22k
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	250MHz
Power - Max	100mW
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Supplier Device Package	USM
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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RN1302,LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W USM	Details
RN1303(TE85L,F)	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W USM	Details
RN1304	TOSHIBA	RN1304 TOSHIBA SOT323 New Original Stocks	Details
RN1304,LF	Toshiba Semiconductor and Storage	X34 PB-F USM PLN LF TRANSISTOR	Details
RN1305	TOSHIBA	RN1305 TOSHIBA SOT23 New Original Stocks	Details
RN1305,LF	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.1W USM	Details
RN1306	TOSHIBA	RN1306 TOSHIBA RN1306 New Original Stocks	Details