HN1C01FE-GR,LF - Toshiba Semiconductor and Storage

Part Number	HN1C01FE-GR,LF
Part Status	Active
Transistor Type	2 NPN (Dual)
Current - Collector (Ic) (Max)	150mA
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Power - Max	100mW
Frequency - Transition	80MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	ES6
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
HN1C01F	TOSBHIBA	HN1C01F TOSBHIBA SOT-16.. New Original Stocks	Details
HN1C01F-G	TOSHIBA	HN1C01F-G TOSHIBA SOT363 New Original Stocks	Details
HN1C01F-GR	TOSHIBA	HN1C01F-GR TOSHIBA SOT23-.. New Original Stocks	Details
HN1C01F-GR(TE85L,F	Toshiba Semiconductor and Storage	TRANS 2NPN 50V 0.15A SM6	Details
HN1C01F-Y	TOS	HN1C01F-Y TOS SOT23 New Original Stocks	Details
HN1C01FE-GR,LF	Toshiba Semiconductor and Storage	TRANS 2NPN 50V 0.15A ES6	Details
HN1C01FE-Y,LF	Toshiba Semiconductor and Storage	TRANS 2NPN 50V 0.15A ES6	Details
HN1C01FU	TOSHIBA	HN1C01FU TOSHIBA SOT-36.. New Original Stocks	Details
HN1C01FU-GR	TOSHIBA	HN1C01FU-GR TOSHIBA SC70-6 New Original Stocks	Details
HN1C01FU-GR,LF	Toshiba Semiconductor and Storage	TRANS 2NPN 50V 0.15A US6	Details