2SK4016(Q)

2SK4016(Q) - Toshiba Semiconductor and Storage

Part Number
2SK4016(Q)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N-CH 600V 13A TO220SIS
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SK4016(Q) PDF online browsing
Datasheet PDF Download
2SK4016(Q).pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3956 pcs
Reference Price
USD 0/pcs
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2SK4016(Q) Detailed Description

Part Number 2SK4016(Q)
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Rds On (Max) @ Id, Vgs 500 mOhm @ 6.5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220SIS
Package / Case TO-220-3 Full Pack
Weight -
Country of Origin -

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