2SJ168TE85LF - Toshiba Semiconductor and Storage

Part Number	2SJ168TE85LF
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	85pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	200mW (Ta)
Rds On (Max) @ Id, Vgs	2 Ohm @ 50mA, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-59
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
2SJ102	ORIGINAL	2SJ102 ORIGINAL TO-220 New Original Stocks	Details
2SJ106-GR	TOSHIBA	2SJ106-GR TOSHIBA TO-23 New Original Stocks	Details
2SJ106-Y	TOS	2SJ106-Y TOS SOT-23 New Original Stocks	Details
2SJ108	SI	2SJ108 SI TO-92 New Original Stocks	Details
2SJ111A	FAI	2SJ111A FAI TO-92 New Original Stocks	Details
2SJ113	MOT	2SJ113 MOT TO-92 New Original Stocks	Details
2SJ115	EXSHINE	SILICON P-CHANNEL MOS FET	Details
2SJ117	ON	2SJ117 ON TO-252 New Original Stocks	Details
2SJ118	EXSHINE	SILICON P-CHANNEL MOS FET	Details
2SJ119	EXSHINE	SILICON P-CHANNEL MOS FET	Details