2SC3074-O(Q) - Toshiba Semiconductor and Storage

Part Number	2SC3074-O(Q)
Part Status	Obsolete
Transistor Type	NPN
Current - Collector (Ic) (Max)	5A
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	400mV @ 150mA, 3A
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 1A, 1V
Power - Max	1W
Frequency - Transition	120MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package	PW-MOLD
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
2SC3000	SAY	2SC3000 SAY TO-92 New Original Stocks	Details
2SC3007	EXSHINE	SILICON NPN EPITAXIAL TYPE (PCT PROCESS)	Details
2SC3011	KEXIN	Silicon NPN Epitaxial	Details
2SC3012	EXSHINE	PNP SILICON EPITAXIAL/NPN SILICON TRIPLE DIFFUSED TRANSISTOR	Details
2SC3013	RENESAS	2SC3013 RENESAS SOT-23 New Original Stocks	Details
2SC3015	RENESAS	2SC3015 RENESAS SOT-23 New Original Stocks	Details
2SC3030	FUJI	TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE HIGH SPEED SWITCHING	Details
2SC3031	EXSHINE	High speed switching transistor	Details
2SC3032	EXSHINE	High speed switching transistor	Details
2SC3033	EXSHINE	High speed switching transistor	Details