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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Single › 2SC2235-O(T6FJT,AF
2SC2235-O(T6FJT,AF

2SC2235-O(T6FJT,AF - Toshiba Semiconductor and Storage

Part Number
2SC2235-O(T6FJT,AF
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS NPN 800MA 120V TO226-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SC2235-O(T6FJT,AF PDF online browsing
Datasheet PDF Download
2SC2235-O(T6FJT,AF.pdf
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3754 pcs
Reference Price
USD 0/pcs
Our Price
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2SC2235-O(T6FJT,AF Detailed Description

Part Number 2SC2235-O(T6FJT,AF
Part Status Last Time Buy
Transistor Type NPN
Current - Collector (Ic) (Max) 800mA
Voltage - Collector Emitter Breakdown (Max) 120V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 100mA, 5V
Power - Max 900mW
Frequency - Transition 120MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Long Body
Supplier Device Package TO-92MOD
Weight -
Country of Origin -

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