2SB1481(TOJS,Q,M)

2SB1481(TOJS,Q,M) - Toshiba Semiconductor and Storage

Part Number
2SB1481(TOJS,Q,M)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS PNP 4A 100V TO220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SB1481(TOJS,Q,M) PDF online browsing
Datasheet PDF Download
2SB1481(TOJS,Q,M).pdf
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4467 pcs
Reference Price
USD 0/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for 2SB1481(TOJS,Q,M)

2SB1481(TOJS,Q,M) Detailed Description

Part Number 2SB1481(TOJS,Q,M)
Part Status Last Time Buy
Transistor Type PNP
Current - Collector (Ic) (Max) 4A
Voltage - Collector Emitter Breakdown (Max) 100V
Vce Saturation (Max) @ Ib, Ic 1.5V @ 6mA, 3A
Current - Collector Cutoff (Max) 2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 3A, 2V
Power - Max 2W
Frequency - Transition -
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NIS
Weight -
Country of Origin -

RELATED PRODUCTS FOR 2SB1481(TOJS,Q,M)