2SA1869-Y(Q,M) - Toshiba Semiconductor and Storage

Part Number	2SA1869-Y(Q,M)
Part Status	Last Time Buy
Transistor Type	PNP
Current - Collector (Ic) (Max)	3A
Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	600mV @ 200mA, 2A
Current - Collector Cutoff (Max)	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 500mA, 2V
Power - Max	10W
Frequency - Transition	100MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Supplier Device Package	TO-220NIS
Weight	-
Country of Origin	-

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