| Part Number | TSM80N1R2CH C5G |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 2.75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19.4nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 685pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251 (IPAK) |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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TSM802 | TSC | 20V N-Channel MOSFET w/ESD Protected | Details |
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TSM802CQRK | TSC | 20V N-Channel MOSFET w/ESD Protected | Details |
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TSM802CQRKG | TSC | 20V N-Channel MOSFET w/ESD Protected | Details |
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TSM802CQRV | TSC | 20V N-Channel MOSFET w/ESD Protected | Details |
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TSM802CQRVG | TSC | 20V N-Channel MOSFET w/ESD Protected | Details |
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TSM80N08CZ C0G | Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 75V 80A TO220 | Details |
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TSM80N1R2CH C5G | Taiwan Semiconductor Corporation | MOSFET N-CH 800V 5.5A TO251 | Details |
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TSM80N1R2CI C0G | Taiwan Semiconductor Corporation | MOSFET N-CH 800V 5.5A ITO220 | Details |
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TSM80N1R2CL C0G | Taiwan Semiconductor Corporation | MOSFET N-CH 800V 5.5A TO262S | Details |
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TSM80N1R2CP ROG | Taiwan Semiconductor Corporation | MOSFET N-CH 800V 5.5A TO252 | Details |
