TSM6NB60CZ C0G

TSM6NB60CZ C0G - Taiwan Semiconductor Corporation

Part Number
TSM6NB60CZ C0G
Manufacturer
Taiwan Semiconductor Corporation
Brief Description
MOSFET N-CHANNEL 600V 6A TO220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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TSM6NB60CZ C0G PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
41640 pcs
Reference Price
USD 0/pcs
Our Price
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TSM6NB60CZ C0G Detailed Description

Part Number TSM6NB60CZ C0G
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6 Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18.3nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 872pF @ 25V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220
Package / Case TO-220-3
Weight -
Country of Origin -

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