TSM60NB190CF C0G

TSM60NB190CF C0G - Taiwan Semiconductor Corporation

Part Number
TSM60NB190CF C0G
Manufacturer
Taiwan Semiconductor Corporation
Brief Description
MOSFET N-CH 600V 18A ITO220S
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TSM60NB190CF C0G PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
63082 pcs
Reference Price
USD 2.61/pcs
Our Price
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TSM60NB190CF C0G Detailed Description

Part Number TSM60NB190CF C0G
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190 mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1311pF @ 100V
FET Feature -
Power Dissipation (Max) 59.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package ITO-220S
Package / Case TO-220-3 Full Pack
Weight -
Country of Origin -

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