TSM60N1R4CH C5G

TSM60N1R4CH C5G - Taiwan Semiconductor Corporation

Part Number
TSM60N1R4CH C5G
Manufacturer
Taiwan Semiconductor Corporation
Brief Description
MOSFET N-CH 600V 3.3A TO251
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TSM60N1R4CH C5G PDF online browsing
Datasheet PDF Download
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
357685 pcs
Reference Price
USD 0.46032/pcs
Our Price
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TSM60N1R4CH C5G Detailed Description

Part Number TSM60N1R4CH C5G
Part Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.4 Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.7nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 370pF @ 100V
FET Feature -
Power Dissipation (Max) 38W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (IPAK)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Weight -
Country of Origin -

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