S1J-JR3 - Taiwan Semiconductor Corporation

Part Number	S1J-JR3
Part Status	Last Time Buy
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	600V
Current - Average Rectified (Io)	1A
Voltage - Forward (Vf) (Max) @ If	1.1V @ 1A
Speed	Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr)	1.5µs
Current - Reverse Leakage @ Vr	1µA @ 600V
Capacitance @ Vr, F	12pF @ 4V, 1MHz
Mounting Type	Surface Mount
Package / Case	DO-214AC, SMA
Supplier Device Package	DO-214AC (SMA)
Operating Temperature - Junction	-55°C ~ 175°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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S1J R3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AC	Details
S1J-13	Diodes Incorporated	DIODE GEN PURP 600V 1A SMA	Details
S1J-13-F	Diodes Incorporated	DIODE GEN PURP 600V 1A SMA	Details
S1J-B/SS	ORIGINAL	S1J-B/SS ORIGINAL DO214A.. New Original Stocks	Details
S1J-E3/11T	VISHAY	S1J-E3/11T VISHAY DO214A New Original Stocks	Details
S1J-E3/51T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC	Details
S1J-E3/5AT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC	Details
S1J-E3/61T	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO214AC	Details