STB18N60M2

STB18N60M2 - STMicroelectronics

Part Number
STB18N60M2
Manufacturer
STMicroelectronics
Brief Description
MOSFET N-CH 600V D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
STB18N60M2 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
377500 pcs
Reference Price
USD 1.4196/pcs
Our Price
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STB18N60M2 Detailed Description

Part Number STB18N60M2
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 21.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 791pF @ 100V
Vgs (Max) ±25V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Rds On (Max) @ Id, Vgs 280 mOhm @ 6.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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