STB11NM60FDT4

STB11NM60FDT4 - STMicroelectronics

Part Number
STB11NM60FDT4
Manufacturer
STMicroelectronics
Brief Description
MOSFET N-CH 600V 11A D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
STB11NM60FDT4 PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
10000 pcs
Reference Price
USD 2.7489/pcs
Our Price
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STB11NM60FDT4 Detailed Description

Part Number STB11NM60FDT4
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 900pF @ 25V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 160W (Tc)
Rds On (Max) @ Id, Vgs 450 mOhm @ 5.5A, 10V
Operating Temperature -
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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