STB100N6F7 - STMicroelectronics

Part Number	STB100N6F7
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1980pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Rds On (Max) @ Id, Vgs	5.6 mOhm @ 50A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	D2PAK
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

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