RUE003N02TL - Rohm Semiconductor

Part Number	RUE003N02TL
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 4V
Vgs(th) (Max) @ Id	1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	25pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Rds On (Max) @ Id, Vgs	1 Ohm @ 300mA, 4V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	EMT3
Package / Case	SC-75, SOT-416
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
RUE002N02	ROHM	RUE002N02 ROHM SOT423 New Original Stocks	Details
RUE002N02TL	Rohm Semiconductor	MOSFET N-CH 20V .2A EMT3	Details
RUE002N05	ROHM	RUE002N05 ROHM SOT423 New Original Stocks	Details
RUE002N05TL	Rohm Semiconductor	MOSFET N-CH 50V 0.2A EMT3	Details
RUE003N02	ROHM	RUE003N02 ROHM SOT423 New Original Stocks	Details
RUE003N02TL	Rohm Semiconductor	MOSFET N-CH 20V 300MA EMT3	Details
RUE003N02_1	ROHM	1.8V Drive Nch MOSFET	Details
RUE090	Littelfuse Inc.	POLYSWITCH RUE SERIES 0.90A	Details