RQK0607AQDQS#H1

RQK0607AQDQS#H1 - Renesas Electronics America

Part Number
RQK0607AQDQS#H1
Manufacturer
Renesas Electronics America
Brief Description
MOSFET N-CH
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
RQK0607AQDQS#H1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4066 pcs
Reference Price
USD 0/pcs
Our Price
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RQK0607AQDQS#H1 Detailed Description

Part Number RQK0607AQDQS#H1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.4A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 170pF @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Rds On (Max) @ Id, Vgs 270 mOhm @ 1.2A, 4.5V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package UPAK
Package / Case TO-243AA
Weight -
Country of Origin -

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