NP50P06KDG-E1-AY Detailed Description
Part Number |
NP50P06KDG-E1-AY |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60V |
Current - Continuous Drain (Id) @ 25°C |
50A (Tc) |
Drive Voltage (Max Rds On,Min Rds On) |
4.5V, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
95nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
5000pF @ 10V |
Vgs (Max) |
±20V |
FET Feature |
- |
Power Dissipation (Max) |
1.8W (Ta), 90W (Tc) |
Rds On (Max) @ Id, Vgs |
17 mOhm @ 25A, 10V |
Operating Temperature |
175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-263 |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Weight |
- |
Country of Origin |
- |
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