NP36P04KDG-E1-AY

NP36P04KDG-E1-AY - Renesas Electronics America

Part Number
NP36P04KDG-E1-AY
Manufacturer
Renesas Electronics America
Brief Description
MOSFET P-CH 40V 36A TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
NP36P04KDG-E1-AY PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
3964 pcs
Reference Price
USD 0/pcs
Our Price
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NP36P04KDG-E1-AY Detailed Description

Part Number NP36P04KDG-E1-AY
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 1.8W (Ta), 56W (Tc)
Rds On (Max) @ Id, Vgs 17 mOhm @ 18A, 10V
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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