NP23N06YDG-E1-AY - Renesas Electronics America

Part Number	NP23N06YDG-E1-AY
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	23A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	5V, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1800pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	1W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs	27 mOhm @ 11.5A, 10V
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSON
Package / Case	8-SMD, Flat Lead Exposed Pad
Weight	-
Country of Origin	-