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Home › Product Categories › Discrete Semiconductor › Transistors - Bipolar (BJT) - Arrays, Pre-Biased › NSVMUN5135DW1T1G
NSVMUN5135DW1T1G

NSVMUN5135DW1T1G - ON Semiconductor

Part Number
NSVMUN5135DW1T1G
Manufacturer
ON Semiconductor
Brief Description
TRANS 2PNP PREBIAS 50V SOT363-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
NSVMUN5135DW1T1G PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
269090 pcs
Reference Price
USD 0.1011/pcs
Our Price
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NSVMUN5135DW1T1G Detailed Description

Part Number NSVMUN5135DW1T1G
Part Status Active
Transistor Type 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 250mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Weight -
Country of Origin -

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