NSBA123JDXV6T5G Detailed Description
Part Number |
NSBA123JDXV6T5G |
Part Status |
Active |
Transistor Type |
2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) |
100mA |
Voltage - Collector Emitter Breakdown (Max) |
50V |
Resistor - Base (R1) (Ohms) |
2.2k |
Resistor - Emitter Base (R2) (Ohms) |
47k |
DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic |
250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) |
500nA |
Frequency - Transition |
- |
Power - Max |
500mW |
Mounting Type |
Surface Mount |
Package / Case |
SOT-563, SOT-666 |
Supplier Device Package |
SOT-563 |
Weight |
- |
Country of Origin |
- |
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