FQA11N90-F109 - ON Semiconductor

Part Number	FQA11N90-F109
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900V
Current - Continuous Drain (Id) @ 25°C	11.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	960 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	94nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3500pF @ 25V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3PN
Package / Case	TO-3P-3, SC-65-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FQA11N90	Fairchild/ON Semiconductor	MOSFET N-CH 900V 11.4A TO-3P	Details
FQA11N90-F109	ON Semiconductor	MOSFET N-CH 900V 11.4A TO-3P	Details
FQA11N90C	Fairchild/ON Semiconductor	MOSFET N-CH 900V 11A TO-3P	Details
FQA11N90C-F109	ON Semiconductor	MOSFET N-CH 900V 11A TO-3P	Details
FQA11N90C_F109	Fairchild/ON Semiconductor	MOSFET N-CH 900V 11A TO-3P	Details
FQA11N90_F109	Fairchild/ON Semiconductor	MOSFET N-CH 900V 11.4A TO-3P	Details