FDZ191P_P

FDZ191P_P - ON Semiconductor

Part Number
FDZ191P_P
Manufacturer
ON Semiconductor
Brief Description
MOSFET P-CH 20V 3A 6WLCSP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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FDZ191P_P PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
17617 pcs
Reference Price
USD 0/pcs
Our Price
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FDZ191P_P Detailed Description

Part Number FDZ191P_P
Part Status Obsolete
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 85 mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
FET Feature -
Power Dissipation (Max) 1.9W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-WLCSP (1.0x1.5)
Package / Case 6-UFBGA, WLCSP
Weight -
Country of Origin -

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