SI4800,518 - NXP USA Inc.

Part Number	SI4800,518
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	9A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11.8nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta)
Rds On (Max) @ Id, Vgs	18.5 mOhm @ 9A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI4800	PHIL	SI4800 PHIL SOP-8 New Original Stocks	Details
SI4800,518	NXP USA Inc.	MOSFET N-CH 30V 9A SOT96-1	Details
SI4800-T1	PHILIPS	SI4800-T1 PHILIPS SOP-8 New Original Stocks	Details
SI4800B	Vishay	SI4800B Vishay SOP8 New Original Stocks	Details
SI4800B/DY-T1-E3[]	VISHAY	SI4800B/DY-T1-E3[] VISHAY SOP-8 New Original Stocks	Details
SI4800BCY-T1-E3	VISHAY	SI4800BCY-T1-E3 VISHAY SOP New Original Stocks	Details
SI4800BDY	VISHAY	SI4800BDY VISHAY SOP-8 New Original Stocks	Details
SI4800BDY-T1	VISHAY	SI4800BDY-T1 VISHAY SOP-8 New Original Stocks	Details
SI4800BDY-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 6.5A 8-SOIC	Details
SI4800BDY-T1-E3.	V	SI4800BDY-T1-E3. V SO-8 New Original Stocks	Details