PDTD113ZS,126

PDTD113ZS,126 - NXP USA Inc.

Part Number
PDTD113ZS,126
Manufacturer
NXP USA Inc.
Brief Description
TRANS PREBIAS NPN 500MW TO92-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
PDTD113ZS,126 PDF online browsing
Datasheet PDF Download
PDTD113ZS,126.pdf
Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
4255 pcs
Reference Price
USD 0/pcs
Our Price
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PDTD113ZS,126 Detailed Description

Part Number PDTD113ZS,126
Part Status Obsolete
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 500mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 10k
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 500mW
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Weight -
Country of Origin -

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