PSMN5R6-100YSFX - Nexperia USA Inc.

Part Number	PSMN5R6-100YSFX
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	158A
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	63nC @ 10V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	-
FET Feature	-
Power Dissipation (Max)	294W
Operating Temperature	175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SOT-1023, 4-LFPAK
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PSMN5R0-100ES,127	Nexperia USA Inc.	MOSFET N-CH 100V 120A I2PAK	Details
PSMN5R0-100PS,127	Nexperia USA Inc.	MOSFET N-CH 100V 120A TO220AB	Details
PSMN5R0-100XS,127	NXP USA Inc.	MOSFET N-CH 100V 67.5A TO-220F	Details
PSMN5R0-30YL,115	Nexperia USA Inc.	MOSFET N-CH 30V 91A LFPAK	Details
PSMN5R0-80BS,118	Nexperia USA Inc.	MOSFET N-CH 80V 100A D2PAK	Details
PSMN5R0-80PS	NXP	PSMN5R0-80PS NXP TO-220 New Original Stocks	Details
PSMN5R0-80PS,127	Nexperia USA Inc.	MOSFET N-CH 80V 100A TO220AB	Details
PSMN5R2-60YLX	Nexperia USA Inc.	MOSFET N-CH 60V LFPAK56	Details
PSMN5R3-25MLDX	Nexperia USA Inc.	PSMN5R3-25MLD/MLFPAK/REEL 7 Q	Details
PSMN5R4-25YLDX	Nexperia USA Inc.	PSMN5R4-25YLD/LFPAK/REEL 7 Q1	Details