PDTD123YQAZ - Nexperia USA Inc.

Part Number	PDTD123YQAZ
Part Status	Active
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	2.2k
Resistor - Emitter Base (R2) (Ohms)	10k
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	210MHz
Power - Max	325mW
Mounting Type	Surface Mount
Package / Case	3-XDFN Exposed Pad
Supplier Device Package	DFN1010D-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PDTD113EK,115	NXP USA Inc.	TRANS PREBIAS NPN 250MW SMT3	Details
PDTD113EQAZ	Nexperia USA Inc.	TRANS PREBIAS NPN 3DFN	Details
PDTD113ES,126	NXP USA Inc.	TRANS PREBIAS NPN 500MW TO92-3	Details
PDTD113ET,215	Nexperia USA Inc.	TRANS PREBIAS NPN 250MW TO236AB	Details
PDTD113EUF	Nexperia USA Inc.	TRANS PREBIAS NPN 0.425W	Details
PDTD113EUX	Nexperia USA Inc.	TRANS PREBIAS NPN 0.425W	Details
PDTD113ZK,115	NXP USA Inc.	TRANS PREBIAS NPN 250MW SMT3	Details
PDTD113ZQAZ	Nexperia USA Inc.	TRANS PREBIAS NPN 3DFN	Details
PDTD113ZS,126	NXP USA Inc.	TRANS PREBIAS NPN 500MW TO92-3	Details
PDTD113ZT,215	Nexperia USA Inc.	TRANS PREBIAS NPN 250MW TO236AB	Details